Integrated artificial saturable absorber based on kerr nonlinearity in silicon nitride

Link:
Autor/in:
Erscheinungsjahr:
2017
Medientyp:
Text
Schlagworte:
  • Q switching
  • Laser mode locking
  • Semiconductor saturable
  • Phosphors
  • Luminescence
  • Light Emission
  • Q switching
  • Laser mode locking
  • Semiconductor saturable
  • Phosphors
  • Luminescence
  • Light Emission
Beschreibung:
  • An integrated artificial fast saturable absorber at 1.9 μm is demonstrated in a CMOScompatible process. It is based on the Kerr effect in a nonlinear Mach-Zehnder Interferometer using silicon nitride waveguides embedded in SiO2.
Lizenz:
  • info:eu-repo/semantics/restrictedAccess
Quellsystem:
Forschungsinformationssystem der UHH
Interne Metadaten
Quelldatensatz
oai:www.edit.fis.uni-hamburg.de:publications/53dac08b-7303-4a16-a5cc-0be8a4067522