Using the adsorbate-induced two-dimensional electron system on InAs(110) as an initial state, which provides rather small energy and k-space distribution, we measure the photoelectron intensity as a function of photoelectron energy. It oscillates twice between 3 eV and 23 eV having maxima at 5.5 eV and 19 eV. Comparison with calculations performed within the one-step model shows that the maximum at low energy is due to an overlap of a maximum in the photoelectron escape depth and a maximum of the matrix elements corresponding to the atomic wave functions. In contrast, the maximum at high energy is caused by final states crossing the Gamma point exactly at this energy. The comparison confirms the theoretical prediction that the escape depth at low excitation energies can be significantly modified by band-structure effects.