Electronic properties of etched-regrown heterostructure interfaces

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Erscheinungsjahr:
2003
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Text
Beschreibung:
  • In order to develop a technique for the fabrication of novel low-dimensional heterostructure devices, we study the electronic properties of in situ chlorine etched and epitaxially regrown heterostructures. In our modulation-doped heterostructures, a two-dimensional electron system is located directly at the etched and regrown GaAs/AlGaAs interface. We evaluate the ratio of the classical transport scattering time τt and the single particle relaxation time τs determined from Shubnikov-de Haas oscillations. While the chlorine pressure during the etching process was the same, we compare samples etched at different temperatures. We find that the mobilities μ=t/m* exhibit a pronounced maximum of 186,000 cm2/V. An evaluation of the single particle relaxation time τs shows that the ratio of τt/τs also reveals a distinct maximum. Our analysis strongly indicates an etching temperature dependent roughness of the etched and regrown interface.
Lizenz:
  • info:eu-repo/semantics/restrictedAccess
Quellsystem:
Forschungsinformationssystem der UHH

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oai:www.edit.fis.uni-hamburg.de:publications/861989e6-c042-4dbe-9a12-e40d77aa2b55