Faceting during GaAs quantum dot self-assembly by droplet epitaxy

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Erscheinungsjahr:
2007
Medientyp:
Text
Beschreibung:
  • Strain-free GaAs quantum dots (QDs) are grown in a self-assembled fashion by applying Ga droplet epitaxy. The QDs are studied using electron diffraction and atomic force microscopy. Two distinct regimes are observed for the QD shape. QDs whose volume exceeds approximately 3×105 Ga atoms are shaped like truncated pyramids with side facets having an angle of about 55°. Smaller QDs are pyramidlike with 25° facets.
Lizenz:
  • info:eu-repo/semantics/restrictedAccess
Quellsystem:
Forschungsinformationssystem der UHH

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oai:www.edit.fis.uni-hamburg.de:publications/8bcb2d6c-b715-4d9b-a9ba-e676551bd7b9