Faceting during GaAs quantum dot self-assembly by droplet epitaxy

Link:

https://doi.org/10.1063/1.2737123

Autor/in:

Erscheinungsjahr:

2007

Medientyp:

Text

Beschreibung:

Strain-free GaAs quantum dots (QDs) are grown in a self-assembled fashion by applying Ga droplet epitaxy. The QDs are studied using electron diffraction and atomic force microscopy. Two distinct regimes are observed for the QD shape. QDs whose volume exceeds approximately 3× 105 Ga atoms are shaped like truncated pyramids with side facets having an angle of about 55°. Smaller QDs are pyramidlike with 25° facets. © 2007 American Institute of Physics.

Lizenz:

info:eu-repo/semantics/closedAccess

Quellsystem:

Forschungsinformationssystem der UHH

Interne Metadaten

Quelldatensatz: oai:www.edit.fis.uni-hamburg.de:publications/8bcb2d6c-b715-4d9b-a9ba-e676551bd7b9