We fabricate GaAs epitaxial quantum dots (QDs) by filling of self- organized nanoholes in AlGaAs. The QDs are fabricated under optimized process conditions and have ultra- low density in the 10(6) cm(-2) regime. At low excitation power the optical emission of single QDs exhibit sharp excitonic lines, which are attributed to the recombination of excitonic and biexcitonic states. High excitation power measurements reveal surprisingly broad emission lines from at least six QD shell states.