Quantum hall transition in real space: From localized to extended states

Link:
Autor/in:
Erscheinungsjahr:
2008
Medientyp:
Text
Schlagworte:
  • Scanning tunneling microscopy
  • Semiconductor materials
  • Surfaces
  • Semiconductor Quantum Dots
  • Semiconductor Quantum Wells
  • Gallium Arsenide
  • Scanning tunneling microscopy
  • Semiconductor materials
  • Surfaces
  • Semiconductor Quantum Dots
  • Semiconductor Quantum Wells
  • Gallium Arsenide
Beschreibung:
  • Using scanning tunneling spectroscopy in an ultrahigh vacuum at low temperature (T=0.3 K) and high magnetic fields (B <= 12 T), we directly probe electronic wave functions across an integer quantum Hall transition. In accordance with theoretical predictions, we observe the evolution from localized drift states in the insulating phases to branched extended drift states at the quantum critical point. The observed microscopic behavior close to the extended state indicates points of localized quantum tunneling, which are considered to be decisive for a quantitative description of the transition.
Lizenz:
  • info:eu-repo/semantics/closedAccess
Quellsystem:
Forschungsinformationssystem der UHH

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oai:www.edit.fis.uni-hamburg.de:publications/bd832d05-3d6d-4d6f-a900-c6646d9c759f