Electronic structure of bulk ferromagnetic Ge0.86Mn0.14Te

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Erscheinungsjahr:
2009
Medientyp:
Text
Schlagworte:
  • Magnetic semiconductors
  • Ferromagnetism
  • Magnetization
  • Magnetic Anisotropy
  • Magnetism
  • Magnetic semiconductors
  • Ferromagnetism
  • Magnetization
  • Magnetic Anisotropy
  • Magnetism
Beschreibung:
  • The electronic structure of polycrystalline Ge0.86Mn0.14Te-ferromagnetic semiconductor with TC=110 K, has been studied by means of resonant photoemission spectroscopy for photon energies close to the Mn 3p→3d excitation. The contribution of Mn 3d states to the electronic structure of the system was revealed and position of the Mn ions in the crystal, characteristic of GeTe-based diluted magnetic semiconductors was proved. © 2009 Elsevier Ltd. All rights reserved.
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  • info:eu-repo/semantics/closedAccess
Quellsystem:
Forschungsinformationssystem der UHH
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oai:www.edit.fis.uni-hamburg.de:publications/1ba36e33-b733-4440-853f-d822b40d2206