Charge collection studies of proton-irradiated n- and p-type epitaxial silicon detectors

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Autor/in:
Erscheinungsjahr:
2010
Medientyp:
Text
Schlagworte:
  • Silicon detectors
  • Pixels
  • Planar pixel
  • Detectors
  • High Energy Physics
  • Readout Systems
  • Silicon detectors
  • Pixels
  • Planar pixel
  • Detectors
  • High Energy Physics
  • Readout Systems
Beschreibung:
  • Proton-irradiated epitaxial pad diodes of 75 100 and 150 pm thickness and different oxygen concentrations were studied as an option to withstand the extreme radiation environment in the innermost tracking region of the future Super-LHC With a new TCT setup using red laser light time-resolved current signals could be measured in 150 mu m thin diodes Thus the charge correction method (CCM) could be used to extract the effective trapping times Similar results compared to previously investigated materials were obtained if the standard model of trapping is assumed which is based on a constant trapping time at each fluence and neglects detrapping and charge multiplication Charge collection efficiency (CCE) measured with 5 8 MeV alpha-particles showed an increase for decreasing thickness but no dependence on impurity concentration was seen CCE simulations based on the effective trapping time constants determined with the CCM resulted in systematically lower values than the measurements This is the case for the CCE of both alpha-particles red and infrared laser light To account for this possible modifications of the trapping model including voltage- or field-dependent trapping times will be discussed Moreover at high fluences and voltages anomalously high CCE > 1 was observed which indicates charge multiplication effects (C) 2010 Elsevier B V All rights reserved
Lizenz:
  • info:eu-repo/semantics/restrictedAccess
Quellsystem:
Forschungsinformationssystem der UHH

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oai:www.edit.fis.uni-hamburg.de:publications/e2b282f5-9b61-4c36-830f-7f70ddaf357e