One-dimensional subbands of narrow electron channels in gated AlxGa1-xAs/GaAs heterojunctions

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Erscheinungsjahr:
1988
Medientyp:
Text
Beschreibung:
  • Lateral quantization of the electronic motion in AlxGa1-xAs/GaAs heterojunctions with a microstructured gate electrode is investigated with static magnetotransport and infrared spectroscopy. In these structures a negative gate bias causes a transition from two-dimensional to quasi-one-dimensional electronic behavior. Spacings of one-dimensional subbands as well as one-dimensional electron densities are derived from quantum oscillations of the magnetoresistance and compared with intersubband resonance energies and electron densities extracted from infrared spectra.
Lizenz:
  • info:eu-repo/semantics/restrictedAccess
Quellsystem:
Forschungsinformationssystem der UHH

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oai:www.edit.fis.uni-hamburg.de:publications/33f47518-7bbb-48cc-861b-9ee9ee25f375