Study of the band-gap energy of radiation-damaged silicon

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Autor/in:
Erscheinungsjahr:
2022
Medientyp:
Text
Schlagworte:
  • damage clusters in silicon
  • phonon energy
  • radiation damage
  • silicon energy gap
Beschreibung:
  • The transmission of silicon crystals irradiated by 24 GeV/c protons and reactor neutrons has been measured for photon energies, Eγ , between 0.95 and 1.3 eV. From the transmission data the absorption coefficient α is calculated, and from α(Eγ) the fluence dependence of the band-gap energy, Egap, and the energy of transverse optical phonons, Eph, determined. It is found that within the experimental uncertainties of about 1 meV neither Egap nor Eph depend on fluence up to the maximum fluence of 1 × 1017 cm-2 of the measurements. The value of Egap agrees within about 1 meV with the generally accepted value, if an exciton-binding energy of 15 meV is assumed. A similar agreement is found for Eph. For the extraction of Egap and Eph the second derivative of √α(Eγ) smoothed with a Gaussian kernel has been used.
Lizenz:
  • info:eu-repo/semantics/openAccess
Quellsystem:
Forschungsinformationssystem der UHH

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Quelldatensatz
oai:www.edit.fis.uni-hamburg.de:publications/095ed06a-4244-46ae-9125-25a2effeefb6