The surface radiation damage of SiO2 grown on high-ohmic n-type Si, as used for the fabrication of segmented silicon sensors, has been investigated. A circular p-MOSFET, biased in inversion at a field in the SiO2 of about 500 kV/cm, has been irradiated by X-rays up to a dose of about 17 kGy(SiO2) in different irradiation steps. Before and after each irradiation, the gate voltage has been cycled from inversion to accumulation conditions and back, and the threshold voltage of the MOSFET and the hole mobility at the Si-SiO2 interface determined. From the threshold voltage, the effective oxide-charge density is calculated. The measurement of the drain-source current during the irradiation allows the study of the change of the oxide-charge density during irradiation. Results on the dose dependence of the effective oxide-charge density, the charging-up and discharging of border traps when changing the gate voltage, and the hole mobility at the Si-SiO2 interface are presented.