Scanning capacitance microscopy and spectroscopy applied to local charge modifications and characterization of nitride-oxide-silicon heterostructures

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Autor/in:
Erscheinungsjahr:
1995
Medientyp:
Text
Schlagworte:
  • 61.16.Ch
  • 68.35.Bs
  • 73.40.Qv
  • 73.90.+f
Beschreibung:
  • We have combined a home-built capacitance sensor with a commercial scanning force microscope to obtain a Scanning Capacitance Microscope (SCM). The SCM has been used to study Nitride-Oxide-Silicon (NOS) heterostructures which offer potential applications in charge storage technology. Charge writing and reading on a submicrometer scale is demonstrated with our SCM setup. In addition, SCM appears to be very useful for the characterization of subsurface defects in semiconductor devices which are inaccessible by most of the other scanning probe microscopies. Finally, we introduce a novel spectroscopic mode of SCM operation which offers combined voltage-dependent and spatially resolved information about inhomogeneous charge distributions in semiconductor devices. © 1995 Springer-Verlag.
Lizenz:
  • info:eu-repo/semantics/closedAccess
Quellsystem:
Forschungsinformationssystem der UHH
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oai:www.edit.fis.uni-hamburg.de:publications/b2c6e99b-3d66-4b9f-9f6b-60ec32752d11