Highly anisotropic electron transport in shallow InGaAs heterostructures

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2003

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We observe strikingly different magnetoconductivities in the two orthogonal (formula presented) directions in strain relaxed (formula presented) heterostructures on GaAs with an additional strained InAs channel. Up to 19% higher mobilities are found in the [-110] direction compared with the [110] direction. In addition, the [110] direction shows a pronounced positive parabolic magnetoresistance, which is not observed in [-110]. The degree of this anisotropic transport is found to decrease for an increase in electron density as well as for an increasing distance between the two-dimensional electron gas and the heterostructure surface. The positive magnetoresistance in [110] can be explained by the semiclassical theory on modulated two-dimensional electron gases. We tentatively attribute the potential modulation to anisotropic spatial variations in residual strain, which are correlated with the cross hatch morphology of the sample surface. © 2003 The American Physical Society.

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Forschungsinformationssystem der UHH

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