Direct measurements of the spin gap in the two-dimensional electron gas of AlGaAs-GaAs heterojunctions

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Erscheinungsjahr:
1997
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Text
Beschreibung:
  • Using magnetocapacitance data, we directly determine the chemical potential jump at low temperatures of about 25 mK when the filling factor traverses the spin gap at ν=1 and the cyclotron gap at ν=2. The chemical potential jump for the cyclotron gap is found to increase proportionally to the magnetic field with a slope that is determined by an effective mass 0.071m0. The data yield a spin gap that also increases proportionally with magnetic field and is described by an enhanced Landé factor g≈5.2. This result has not been explained by existing theoretical models.
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  • info:eu-repo/semantics/closedAccess
Quellsystem:
Forschungsinformationssystem der UHH

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oai:www.edit.fis.uni-hamburg.de:publications/3936a466-db28-411c-a370-ed3a99358788