Transport properties of modulation-doped InAs-inserted-channel In0.75 Al0.25 As/In0.75 Ga0.25As structures grown on GaAs substrates

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2000
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  • We report on gate voltage dependent electron transport in modulation-doped In0.75Al0.25AS/In0.75Ga0.25As heterostructures with strained InAs-inserted-channels grown on GaAs substrates. At temperatures of T=4.2 K we achieve mobilities of up to μ = 215 000 cm2(Vs)-1 and electron densities of ns=1.2×1012cm-2 for the highest measured gate voltage of Vg = 20V. The electron effective mass m* = 0.036me is determined by temperature dependent Shubnikov-de Haas measurements. The observation of an anisotropic mobility when the first excited subband becomes populated proves interface scattering to be the limiting mechanism for the electron mobility. © 2000 American Institute of Physics.
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oai:www.edit.fis.uni-hamburg.de:publications/f7f865db-5743-4807-9914-1af2c9daa6fa