Electronic states of Fe atoms and chains on InAs(110) from scanning tunneling spectroscopy

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Autor/in:
Erscheinungsjahr:
2007
Medientyp:
Text
Schlagworte:
  • Scanning tunneling microscopy
  • Semiconductor materials
  • Surfaces
  • Semiconductor Quantum Dots
  • Semiconductor Quantum Wells
  • Gallium Arsenide
  • Scanning tunneling microscopy
  • Semiconductor materials
  • Surfaces
  • Semiconductor Quantum Dots
  • Semiconductor Quantum Wells
  • Gallium Arsenide
Beschreibung:
  • TThe local density of states (DOS) on and around Fe single atoms and Fe chains deposited on the n−InAs(110) surface is studied by scanning tunneling spectroscopy at T≃6K. The single atom shows two characteristic states in the filled as well as in the empty DOS which are attributed to an In-related and an Fe-related state. For chains longer than two atoms oriented along the [1¯10] direction, the In-related state results in a uniform state, while the Fe-related state splits up into an end state and inner states. The end state has a lower energy in the filled as well as in the empty DOS. Chains oriented along the [001] direction show an electronic structure which varies continuously along their axis, suggesting a position-dependent hybridization of each atom to the substrate.
Lizenz:
  • info:eu-repo/semantics/closedAccess
Quellsystem:
Forschungsinformationssystem der UHH

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oai:www.edit.fis.uni-hamburg.de:publications/e4acfa8b-2f95-489d-9e4f-0f77f0f45236