Single-event effect responses of integrated panar inductors in 65 nm CMOS

Link:
Autor/in:
Verlag/Körperschaft:
Hamburg University of Technology
Erscheinungsjahr:
2021
Medientyp:
Text
Schlagworte:
  • Inductors
  • Inductors
  • Ions
  • Metal-Insulator Structures
  • Metals
  • Oscillators
  • Phase locked loops
  • Phase-Locked Loops
  • Radiation effects
  • Radiation Effects
  • Sensitivity
  • Silicon
  • SiO2
  • 600: Technik
Beschreibung:
  • This article describes a previously unreported single-event radiation effect in spiral inductors manufactured in a commercial CMOS technology when subjected to ionizing radiation. Inductors play a major role as the component determining the frequency of LC tank oscillators, which is why any radiation effects in these passive components can have detrimental impact on the performance of clock generation circuits. Different experiments performed to localize and characterize the Single-Event Effect (SEE) response in a radiation-hardened PLL circuit are discussed and presented together with an hypothesis for the underlying physical mechanism.
Beziehungen:
DOI 10.1109/TNS.2021.3121029
Lizenzen:
  • info:eu-repo/semantics/openAccess
  • https://creativecommons.org/licenses/by/4.0/
Quellsystem:
TUHH Open Research

Interne Metadaten
Quelldatensatz
oai:tore.tuhh.de:11420/11057