Atomic layer deposition of ZnS nanotubes

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Autor/in:
Erscheinungsjahr:
2009
Medientyp:
Text
Schlagworte:
  • Zinc sulfide
  • Nanocrystals
  • Photoluminescence
  • Semiconductor Quantum Dots
  • Zinc Sulfide
  • Zinc sulfide
  • Nanocrystals
  • Photoluminescence
  • Semiconductor Quantum Dots
  • Zinc Sulfide
Beschreibung:
  • We report on the growth of high-aspect-ratio (≳) zinc sulfide nanotubes with variable, precisely tunable, wall thicknesses and tube diameters into highly ordered pores of anodic alumina templates by atomic layer deposition (ALD) at temperatures as low as 75 °C. Various characterization techniques are employed to gain information on the composition, morphology and crystal structure of the synthesized samples. Besides practical applications, the ALD-grown tubes could be envisaged as model systems for the study of a certain class of size-dependent quantum and classical phenomena. © 2009 IOP Publishing Ltd.
  • We report on the growth of high-aspect-ratio (greater than or similar to 300) zinc sulfide nanotubes with variable, precisely tunable, wall thicknesses and tube diameters into highly ordered pores of anodic alumina templates by atomic layer deposition (ALD) at temperatures as low as 75 degrees C. Various characterization techniques are employed to gain information on the composition, morphology and crystal structure of the synthesized samples. Besides practical applications, the ALD-grown tubes could be envisaged as model systems for the study of a certain class of size-dependent quantum and classical phenomena.
Lizenz:
  • info:eu-repo/semantics/closedAccess
Quellsystem:
Forschungsinformationssystem der UHH

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oai:www.edit.fis.uni-hamburg.de:publications/b9fb2081-cab2-4c40-b8cf-1095c07340e7