Electric properties of semiconductor nanopillars

We studied the electrical transport through epitaxial, 8 nm long and about 100 nm diameter, GaAs pillars. They are fabricated with molecular beam epitaxy using a self-assembling method called local droplet etching. The nanopillars are embedded in an AlGaAs tunneling barrier between two epitaxial GaAs layers. Because of the epitaxial growth, the pillars are connected to these GaAs layers without additional interfaces. They thus can be considered as electronic point contacts between three-dimensional electron reservoirs. Voltage-current characteristics of the structures feature a characteristic asymmetry that is not observed in reference samples. Furthermore, the behavior of the resistance in magnetic fields applied parallel and perpendicular to the current direction is compared for samples with and without pillars. Clear differences are found that are associated with current-carrying states in the pillars.