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Geometry-enhanced magnetoresistance of narrow Au/InAs hybrid structures incorporating a two-dimensional electron system
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- Erscheinungsjahr:
- 2006
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- We have investigated the magnetoresistance of metal-semiconductor hybrid structures at 4.2 K. The devices consisted of polycrystalline Au and an InAs-based heterostructure that hosted a high-mobility two-dimensional electron system. We have varied the electrical parameters and, in particular, the width-to-length ratio W/L of the linear hybrid structures. The recently discovered extraordinary magnetoresistance effect is most pronounced for narrow devices with W/L≤0.05, consistent with our theoretical prediction. Relative resistance changes with a factor of 1000 are observed at 1 T. To achieve this an interface resistance of only 10-8 Ω cm2 is a prerequisite. This can be prepared routinely by in situ cleaved edge overgrowth. © 2006 American Institute of Physics.
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- info:eu-repo/semantics/closedAccess
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- Forschungsinformationssystem der UHH
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- oai:www.edit.fis.uni-hamburg.de:publications/03f91640-b7c1-4d6d-8336-a8d0223dd468