Geometry-enhanced magnetoresistance of narrow Au/InAs hybrid structures incorporating a two-dimensional electron system

Link:

https://doi.org/10.1063/1.2168265

Autor/in:

Erscheinungsjahr:

2006

Medientyp:

Text

Beschreibung:

We have investigated the magnetoresistance of metal-semiconductor hybrid structures at 4.2 K. The devices consisted of polycrystalline Au and an InAs-based heterostructure that hosted a high-mobility two-dimensional electron system. We have varied the electrical parameters and, in particular, the width-to-length ratio W/L of the linear hybrid structures. The recently discovered extraordinary magnetoresistance effect is most pronounced for narrow devices with W/L≤0.05, consistent with our theoretical prediction. Relative resistance changes with a factor of 1000 are observed at 1 T. To achieve this an interface resistance of only 10-8 Ω cm2 is a prerequisite. This can be prepared routinely by in situ cleaved edge overgrowth. © 2006 American Institute of Physics.

Lizenz:

info:eu-repo/semantics/closedAccess

Quellsystem:

Forschungsinformationssystem der UHH

Interne Metadaten

Quelldatensatz: oai:www.edit.fis.uni-hamburg.de:publications/03f91640-b7c1-4d6d-8336-a8d0223dd468