Tunneling emission from self-assembled InAs quantum dots probed with capacitance transients

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Erscheinungsjahr:
2006
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  • The electron escape from self-assembled InAs quantum dots embedded in GaAs-Schottky diodes is probed with time-resolved capacitance measurements. We present the tunneling-transient spectroscopy technique to derive information on the barrier potential and the quantum dot level structure from the electric-field dependence of the capacitance transients. The data reveal that emission from s - and p -like quantum dot states can clearly be resolved. The barrier potential derived with this method in a simple triangular well model is in good agreement with values derived from measurements of the thermionic emission, if the emission from the s -type dot level is analyzed. The emission from dots occupied with more than one electron is discussed within a simple one-dimensional tunneling model. It reveals that the triangular well model underestimates the well potential by a value close to the Coulomb charging energy. © 2006 The American Physical Society.
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  • info:eu-repo/semantics/closedAccess
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Forschungsinformationssystem der UHH
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oai:www.edit.fis.uni-hamburg.de:publications/64a68b0f-f2f4-453d-9409-0177491e7963