Regimes of GaAs quantum dot self-assembly by droplet epitaxy

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2007
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  • Two regimes are observed for the density of strain-free GaAs quantum dots (QDs) grown by Ga droplet epitaxy. QDs grown from liquid Ga droplets deposited at temperatures up to 200°C exhibit densities that qualitatively agree with classical nucleation theory and are quantitatively reproduced by a rate equations based growth model under consideration of dimer break off. In contrast, at higher growth temperatures, the onset of coarsening by Ostwald ripening [Z. Phys. Chem., Stoechiom. Verwandtschaftsl. 34, 495 (1900)] causes drastically reduced QD densities. Extension of the growth models and consideration of Ostwald ripening allow the quantitative prediction of QD densities in this regime, as well. © 2007 The American Physical Society.
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  • info:eu-repo/semantics/closedAccess
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Forschungsinformationssystem der UHH
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oai:www.edit.fis.uni-hamburg.de:publications/d490fa7b-bed6-4257-a3c3-4ada06cc44df