Real-space mapping of a disordered two-dimensional electron system in the quantum Hall regime

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Autor/in:
Erscheinungsjahr:
2011
Medientyp:
Text
Schlagworte:
  • Scanning tunneling microscopy
  • Semiconductor materials
  • Surfaces
  • Semiconductor Quantum Dots
  • Semiconductor Quantum Wells
  • Gallium Arsenide
  • Scanning tunneling microscopy
  • Semiconductor materials
  • Surfaces
  • Semiconductor Quantum Dots
  • Semiconductor Quantum Wells
  • Gallium Arsenide
Beschreibung:
  • By using scanning tunnelling spectroscopy, we study the influence of potential disorder on an adsorbate-induced two-dimensional electron system in the integer quantum Hall regime. The real-space imaged local density of states exhibits transition from localized drift states encircling the potential minima to another type of localized drift states encircling the potential maxima. While the former states show regular round shapes, the latter have irregular-shaped patterns. This difference is induced by different sources for the potential minima and maxima, i.e., substrate donors and an inhomogeneous distribution of the adsorbates, respectively.
Lizenz:
  • info:eu-repo/semantics/openAccess
Quellsystem:
Forschungsinformationssystem der UHH

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Quelldatensatz
oai:www.edit.fis.uni-hamburg.de:publications/89ff3cad-94d3-461a-8215-77838c8b04c5