The transition between conformal atomic layer epitaxy and nanowire growth

Link:
Autor/in:
Erscheinungsjahr:
2010
Medientyp:
Text
Schlagworte:
  • Antimony
  • Solar cells
  • Antimony sulfide
  • Nanocrystals
  • Semiconductor Quantum Dots
  • Zinc Sulfide
  • Antimony
  • Solar cells
  • Antimony sulfide
  • Nanocrystals
  • Semiconductor Quantum Dots
  • Zinc Sulfide
Beschreibung:
  • Conformal atomic layer deposition of thin Sb2S3 layers takes place epitaxially on suitable substrates at 90 °C. More elevated deposition temperatures increase the mobility of the solid and result in the diffusion of Sb2S3 along surface energy gradients. On an Sb2Se3 wire that presents the high-energy c facet at its extremity, this results in the axial elongation of the wire with a Sb 2S3 segment. When an Sb2S3 wire whose c planes are exposed on the sides is used as the substrate, the homoepitaxy collects material laterally and yields a nano-object with a rectangular cross section. © 2010 American Chemical Society.
Lizenz:
  • info:eu-repo/semantics/restrictedAccess
Quellsystem:
Forschungsinformationssystem der UHH
Interne Metadaten
Quelldatensatz
oai:www.edit.fis.uni-hamburg.de:publications/fc6aa0e0-0868-4fcc-bf9d-1691022bca0a