This Letter reports on temperature-dependent electrical measurements of single Bi0.92Sb0.08 nanowires with diameters between 220 nm and 350 nm. The magnetoresistance effect under transverse magnetic fields of +/- 2 T and the Seebeck coefficient S are measured in the temperature range of 50-300 K. Additionally, the influence of an annealing step on the transport properties is investigated. The as-prepared wires show heterogeneous temperature dependent behavior, whereas the annealed wires show semiconductive behavior. The room temperature value of the resistivity of the wires is between 2 x 10(-6) m and 1.4 x 10(-5) m. Magnetoresistance effects up to 15\% at 50 K for the as-prepared nanowires and up to 23\% for the annealed wires are observed. The temperature dependent Seebeck coefficient of single wires is determined. The as-prepared wires show a rise of the absolute value of S with temperature and it seems to saturate at room temperature. In contrast to this, the annealed wires show a linear increase of S. The room temperature values of S are -55 mu V K-1 and -45 mu V K-1, respectively.