Modeling a radio-frequency single-electron-transistor scanning probe

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Erscheinungsjahr:
2014
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Text
Beschreibung:
  • Single-electron transistors (SETs) are ultra-sensitive charge sensors. Aiming to develop a radio-frequency single-electron-transistor (RF-SET) scanning probe system, we build a complete device/circuit model to evaluate the charge sensitivity and the spatial resolution. Simulations of a gedunken experiment in which a silicon RF-SET probe scans a nanowire device suggest a charge sensitivity in the order of 10-5-10-3 e/Hz1/2 and a spatial resolution better than 100 nm. The dynamic range and the linearity of the scanning probe are also discussed. The model would provide a quantitative interpretation for future real imaging experiment and an operation guidance for a realistic RF-SET scanning probe system. © 2014 The Japan Society of Applied Physics.
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  • info:eu-repo/semantics/restrictedAccess
Quellsystem:
Forschungsinformationssystem der UHH
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oai:www.edit.fis.uni-hamburg.de:publications/3835d97d-6111-43e1-a3d3-841024700872