Effect of the interface resistance on the extraordinary magnetoresistance of semiconductor/metal hybrid structures

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Autor/in:
Erscheinungsjahr:
2003
Medientyp:
Text
Schlagworte:
  • Cleaved-edge overgrowth
  • Extraordinary magnetoresistance
  • Interface resistance
  • Semiconductor (2DES)/metal hybrid structure
Beschreibung:
  • We report on magnetotransport experiments performed at 4.2 K on hybrid structures consisting of a metal and a mesoscopic two-dimensional electron system in an InAs/InGaAs heterostructure. The devices were fabricated using cleaved-edge overgrowth. We find that they exhibit an extraordinary magnetoresistance effect (EMR) which is most pronounced in the case of the lowest specific contact resistance ρi of ≈10 -8Ω cm2 achieved in this work. The largest relative resistance change ΔR/R is 115,000% at a magnetic field B = 1 T. A systematic study of the performance of the EMR devices with down to sub-μm lateral dimension and with different ρi is reported. © 2003 Plenum Publishing Corporation.
Lizenz:
  • info:eu-repo/semantics/closedAccess
Quellsystem:
Forschungsinformationssystem der UHH
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oai:www.edit.fis.uni-hamburg.de:publications/919362ee-64fe-4c94-bea1-40ea18080400