Electronic properties of thin Ni2MnIn Heusler films

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Erscheinungsjahr:
2005
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Beschreibung:
  • The half-metallic Heusler alloy Ni2MnIn is of high interest for use in spin electronics since at the Ni2MnIn/InAs interface a spin polarization of 100% is predicted. We prepare high-quality thin films of 20–60 nm thickness by co-evaporation and DC magnetron sputtering. Point-contact Andreev reflection spectroscopy yields a spin polarization of up to 54%. By spectral generalized magneto-optical ellipsometry, the dielectric and magneto-optical properties are determined and ferromagnetic behavior below the Curie temperature is proved.
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  • info:eu-repo/semantics/closedAccess
Quellsystem:
Forschungsinformationssystem der UHH

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oai:www.edit.fis.uni-hamburg.de:publications/bb770aa1-185b-4add-9202-f062c82045c5