Local density of states of a three-dimensional conductor in the extreme quantum limit

Link:
Autor/in:
Erscheinungsjahr:
2001
Medientyp:
Text
Schlagworte:
  • Scanning tunneling microscopy
  • Semiconductor materials
  • Surfaces
  • Semiconductor Quantum Dots
  • Semiconductor Quantum Wells
  • Gallium Arsenide
  • Scanning tunneling microscopy
  • Semiconductor materials
  • Surfaces
  • Semiconductor Quantum Dots
  • Semiconductor Quantum Wells
  • Gallium Arsenide
Beschreibung:
  • The oscillations of Hall constant were accompanied by local density of states (LDOS) in the extreme quantum limit. The electronic structure of narrow gap semiconductors was investigated by scanning tunneling microscopy (STM). The coexistence of the two phases was due to the strong influence of electron-electron interactions which are apparent at the Fermi level.
Lizenz:
  • info:eu-repo/semantics/closedAccess
Quellsystem:
Forschungsinformationssystem der UHH

Interne Metadaten
Quelldatensatz
oai:www.edit.fis.uni-hamburg.de:publications/e70e6b7e-d08b-43f8-8fa7-3dc519266d4e