We report resonant Raman scattering studies of GaP1−N and GaAs1−N in the ultraviolet (UV) spectral range. For both materials, strong intensity resonances and their rapid degradation near the respective 1 transition energies exhibited for the zone-center longitudinal optical phonons provide direct evidence that the -point conduction-band edges of GaP1−N and GaAs1−N are strongly perturbed by nitrogen impurities. We also show that UV resonant Raman scattering is a powerful means to study higher lying conduction-band electronic states of semiconductor alloys.