Landau level quantization measured by scanning tunneling spectroscopy on n-InAs(110)

Link:
Autor/in:
Erscheinungsjahr:
1998
Medientyp:
Text
Schlagworte:
  • Scanning tunneling microscopy
  • Semiconductor materials
  • Surfaces
  • Semiconductor Quantum Dots
  • Semiconductor Quantum Wells
  • Gallium Arsenide
  • Scanning tunneling microscopy
  • Semiconductor materials
  • Surfaces
  • Semiconductor Quantum Dots
  • Semiconductor Quantum Wells
  • Gallium Arsenide
Beschreibung:
  • The in-situ cleaved n-InAs(110) surface is studied by low temperature scanning tunneling spectroscopy and microscopy in magnetic fields up to 6 T perpendicular to the surface. The dI/dV(V) curves exhibit characteristic oscillations in magnetic field, which are attributed to Landau levels in the conduction band. The energy dependence of the effective electron mass is determined. Dopants reduce the Landau level energy. As expected, the energy reduction decreases with increasing Landau level number.
Lizenz:
  • info:eu-repo/semantics/restrictedAccess
Quellsystem:
Forschungsinformationssystem der UHH

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Quelldatensatz
oai:www.edit.fis.uni-hamburg.de:publications/e21069c7-dd0a-4cd2-bba5-490a953ece16