Atomic scale properties of interior interfaces of semiconductor heterostructures as determined by quasi-digital highly selective etching and atomic force microscopy

Link:

http://hdl.handle.net/20.500.12738/11975

Autor/in:

Verlag/Körperschaft:

Elsevier

Erscheinungsjahr:

1998

Medientyp:

Text

Schlagworte:

Atomic force microscopy
Etching
Heterostructures
Interfaces
Semiconductors
530: Physik
ddc:530

Quellsystem:

ReposIt

Interne Metadaten

Quelldatensatz: oai:reposit.haw-hamburg.de:20.500.12738/11975