Tip-induced band bending by scanning tunneling spectroscopy of the states of the tip-induced quantum dot on InAs(110)

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Autor/in:
Erscheinungsjahr:
1999
Medientyp:
Text
Schlagworte:
  • Scanning tunneling microscopy
  • Semiconductor materials
  • Surfaces
  • Semiconductor Quantum Dots
  • Semiconductor Quantum Wells
  • Gallium Arsenide
  • Scanning tunneling microscopy
  • Semiconductor materials
  • Surfaces
  • Semiconductor Quantum Dots
  • Semiconductor Quantum Wells
  • Gallium Arsenide
Beschreibung:
  • We analyze the quantized states of the tip-induced quantum dot appearing in scanning tunneling spectroscopy (STS) on n-type InAs(110) (ND = 2 × 1016cm-3). STS at negative sample bias (-200-0 mV) is used to determine the state energies. The analysis of the spectra indicates that the z-quantization leads to one or two quantized states while a ladder of states due to the lateral confinement is observed. The magnetic-field dependence (0-6 T) shows the expected splitting of the first excited state in quantitative agreement with Hartree calculations. If an ionized dopant is located in the center of the quantum dot, a reduction in energy and a change in intensity of the single-particle ground state is found, which is also in quantitative agreement with Hartree calculations. The analysis of the tip-induced states can be used to reconstruct the shape of the tip-induced band bending.
Lizenz:
  • info:eu-repo/semantics/closedAccess
Quellsystem:
Forschungsinformationssystem der UHH

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oai:www.edit.fis.uni-hamburg.de:publications/414eb0fd-193f-407f-b6d4-61b044b31e53