From quantized states to percolation: Scanning tunneling spectroscopy of a strongly disordered two-dimensional electron system

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Autor/in:
Erscheinungsjahr:
2003
Medientyp:
Text
Schlagworte:
  • Scanning tunneling microscopy
  • Semiconductor materials
  • Surfaces
  • Semiconductor Quantum Dots
  • Semiconductor Quantum Wells
  • Gallium Arsenide
  • Scanning tunneling microscopy
  • Semiconductor materials
  • Surfaces
  • Semiconductor Quantum Dots
  • Semiconductor Quantum Wells
  • Gallium Arsenide
Beschreibung:
  • Low-temperature scanning tunneling spectroscopy is used to study the local density of states (LDOS) of an adsorbate induced two-dimensional electron system in a strong disorder potential. At low energy, completely confined states of s- and p-character are found in the valleys of the potential landscape. With increasing energy the whole area becomes filled with LDOS indicating percolation. The percolation threshold is marked by a significant decrease in the LDOS corrugation. Interestingly, we do not find a dominating wavelength in the Fourier transforms of the LDOS, suggesting that classical percolation is a reasonable concept to describe the transition.
Lizenz:
  • info:eu-repo/semantics/closedAccess
Quellsystem:
Forschungsinformationssystem der UHH

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oai:www.edit.fis.uni-hamburg.de:publications/40465871-b30f-469b-ac96-ab6a34e7dad9