In this work, charge collection profiles of non-irradiated and irradiated 150 µm thick -type pad diodes were measured using a 5.2 GeV electron beam traversing the diode parallel to the readout electrode. Four diodes were irradiated to 1 MeV neutron equivalent fluences of 2, 4, 8, and 12 1015 cm−2 with 23 MeV protons. The Charge Collection Efficiency profiles as a function of depth are extracted by unfolding the data. The results of the measurements are compared to the TCAD device simulation using three radiation damage models from literature which were tuned to different irradiation types and fluences.