Direct Measurement of the Local Density of States of a Disordered One-Dimensional Conductor

Link:
Autor/in:
Erscheinungsjahr:
2003
Medientyp:
Text
Schlagworte:
  • Scanning tunneling microscopy
  • Semiconductor materials
  • Surfaces
  • Semiconductor Quantum Dots
  • Semiconductor Quantum Wells
  • Gallium Arsenide
  • Scanning tunneling microscopy
  • Semiconductor materials
  • Surfaces
  • Semiconductor Quantum Dots
  • Semiconductor Quantum Wells
  • Gallium Arsenide
Beschreibung:
  • One-dimensional electron systems (1DESs) containing two and one occupied subbands are found below the different types of {[}1 (1) over bar2] steps of the InAs(110) surface. Using low-temperature scanning tunneling spectroscopy, we determined the subband energies, the disorder potential, and the local density of states of these 1DESs. The rather complete knowledge of the 1DES allowed us to compare the measured LDOS with a single-particle calculation. Surprisingly, we did not find significant deviations from the calculation albeit the electron-electron interaction in the 1DESs is stronger than the electron-disorder interaction.
Lizenz:
  • info:eu-repo/semantics/closedAccess
Quellsystem:
Forschungsinformationssystem der UHH

Interne Metadaten
Quelldatensatz
oai:www.edit.fis.uni-hamburg.de:publications/2b8981a9-563f-4a65-93cc-71741a827edc