Coverage dependence of the Fe-induced Fermi-level shift and the two-dimensional electron gas on InAs(110)

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Autor/in:
Erscheinungsjahr:
2000
Medientyp:
Text
Schlagworte:
  • Scanning tunneling microscopy
  • Semiconductor materials
  • Surfaces
  • Semiconductor Quantum Dots
  • Semiconductor Quantum Wells
  • Gallium Arsenide
  • Scanning tunneling microscopy
  • Semiconductor materials
  • Surfaces
  • Semiconductor Quantum Dots
  • Semiconductor Quantum Wells
  • Gallium Arsenide
Beschreibung:
  • The coverage dependence of the Fe-induced Fermi-level shift on p- and (Formula presented) was investigated by angle-resolved photoelectron spectroscopy at 300 K. The Fermi-level position was found to be coverage dependent, exhibiting a maximum at 300 meV above the conduction-band minimum. The coverage dependence is explained by the surface doping model, if inhomogeneities in the Fe-adatom distribution and the resulting ionization probabilities are taken into account. The Fe-adatom distribution is determined by scanning tunneling microscopy. Photoemission spectra provided direct evidence of a two-dimensional electron gas at the Fe-covered surface. © 2000 The American Physical Society.
Lizenz:
  • info:eu-repo/semantics/closedAccess
Quellsystem:
Forschungsinformationssystem der UHH
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oai:www.edit.fis.uni-hamburg.de:publications/7e20571f-6ff1-4203-b7a0-c151ea9bb15b