Sb2Te3 has recently been an object of intensive research since its promising applicability in thermoelectric, in phase-change memory devices and as a topological insulator. In this work, we report highly textured Sb2Te3 thin films, grown by atomic layer deposition on Si/SiO2 wafers based on the reaction of SbCl3 and (Et3Si)(2)Te. The low deposition temperature at 80 degrees C allows the pre-patterning of the Sb2Te3 by standard lithography processes. A platform to characterize the Seebeck coefficient S, the electrical conductivity sigma as well as the Hall coefficient R-H on the same film has been developed. Comparing all temperature-dependent transport properties, three different conductive regions in the temperature range of 50-400 K are found. Room temperature values of S = 146 x 10(-6) VK-1, sigma = 10(4) Sm-1 and mobility mu = 270.5 x 10(-4) m(2) V-1 s(-1) are determined. The low carrier concentration in the range of n = 2.4 x 10(18) cm(-3) at 300 K quantifies the low defect content of the Sb2Te3 thin films.