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1. Characterization of in situ etched and molecular beam epitaxy regrown GaAs interfaces using capacitance-voltage measurements, far infrared spectroscopy, and magnetotransport measurements

   1. Klein, C.
   2. Kramp, S.
   3. Beyer, S.
   4. Heyn, Ch.
   5. Hansen, W.
   6. Heitmann, D.

   2000 - Forschungsinformationssystem der UHH