Simulation of GaAs growth and surface recovery with respect to galliumand arsenic surface kinetics Heyn, Ch. Harsdorff, M. 1997 - Forschungsinformationssystem der UHH
Correlation between island-formation kinetics, surface roughening, and RHEED oscillation damping during GaAs homoepitaxy Heyn, Ch. Franke, T. Anton, R. Harsdorff, M. 1997 - Forschungsinformationssystem der UHH
Routine measurement of the absolute As4 flux in a molecular beam epitaxy system with conventional RHEED equipment Heyn, Ch. Harsdorff, M. 1996 - Forschungsinformationssystem der UHH
Simultaneous reflection high-energy electron diffraction oscillations and mass spectroscopy investigations during molecular beam epitaxy growth of (001) GaAs - smooth surfaces or stoichiometric films? Heyn, Ch. Harsdorff, M. 1995 - Forschungsinformationssystem der UHH
Flux control and calibration of an As effusion cell in a molecular beam epitaxy system for GaAs and AlGaAs with a quadrupole mass spectrometer Heyn, Ch. Harsdorff, M. 1993 - Forschungsinformationssystem der UHH