Simultaneous large-scale reliability analysis of ultra-thin MOS gate dielectrics using an automated test system

Link:

https://doi.org/10.15480/882.2332

Autor/in:

Verlag/Körperschaft:

Hamburg University of Technology

Erscheinungsjahr:

2008

Medientyp:

Text

Schlagworte:

600: Technik
620: Ingenieurwissenschaften
620
600

Beschreibung:

This article presents an automated test system targeting the large-scale analysis of ultra-thin MOS gate dielectric degradation. The system allows for stress tests at elevated temperatures as well as supply voltages and long-term tests of thousands of MOS devices simultaneously. The aim is to build-up large and hence significant statistics about the degradation process as a function of time. © Author(s) 2008.

Beziehungen:

DOI 10.5194/ars-6-205-2008

Lizenzen:

info:eu-repo/semantics/openAccess
https://creativecommons.org/licenses/by/3.0/

Quellsystem:

TUHH Open Research

Interne Metadaten

Quelldatensatz: oai:tore.tuhh.de:11420/2928