3 Einträge gefunden

1. Effect of MOVPE growth interruptions on the gallium arsenide interior interface morphology

   1. Bernatz, Georg
   2. Nau, Siegfried
   3. Rettig, Rasmus
   4. Stolz, Wolfgang

   2000 - ReposIt
2. Atomic scale properties of interior interfaces of semiconductor heterostructures as determined by quasi-digital highly selective etching and atomic force microscopy

   1. Rettig, Rasmus
   2. Stolz, Wolfgang

   1998 - ReposIt
3. X-ray diffraction study of intentionally disordered (GaIn)As/Ga(PAs) heterostructures

   1. Rettig, Rasmus
   2. Marschner, Thomas
   3. Stolz, Wolfgang
   4. Tapfer, Leander

   1998 - ReposIt