5 Einträge gefunden

1. Simulation of GaAs growth and surface recovery with respect to galliumand arsenic surface kinetics

   1. Heyn, Ch.
   2. Harsdorff, M.

   1997 - Forschungsinformationssystem der UHH
2. Correlation between island-formation kinetics, surface roughening, and RHEED oscillation damping during GaAs homoepitaxy

   1. Heyn, Ch.
   2. Franke, T.
   3. Anton, R.
   4. Harsdorff, M.

   1997 - Forschungsinformationssystem der UHH
3. Routine measurement of the absolute As₄ flux in a molecular beam epitaxy system with conventional RHEED equipment

   1. Heyn, Ch.
   2. Harsdorff, M.

   1996 - Forschungsinformationssystem der UHH
4. Simultaneous reflection high-energy electron diffraction oscillations and mass spectroscopy investigations during molecular beam epitaxy growth of (001) GaAs - smooth surfaces or stoichiometric films?

   1. Heyn, Ch.
   2. Harsdorff, M.

   1995 - Forschungsinformationssystem der UHH
5. Flux control and calibration of an As effusion cell in a molecular beam epitaxy system for GaAs and AlGaAs with a quadrupole mass spectrometer

   1. Heyn, Ch.
   2. Harsdorff, M.

   1993 - Forschungsinformationssystem der UHH