6 Einträge gefunden

1. Electronic properties of etched-regrown heterostructure interfaces

   1. Beyer, S.
   2. Lohr, S.
   3. Heyn, Ch.
   4. Heitmann, D.
   5. Hansen, W.

   2003 - Forschungsinformationssystem der UHH
2. Growth of shallow InAs HEMTs with metamorphic buffer

   1. Heyn, Ch.
   2. Mendach, S.
   3. Lohr, S.
   4. Beyer, S.
   5. Schnüll, S.
   6. Hansen, W.

   2003 - Forschungsinformationssystem der UHH
3. Transport properties of a two-dimensional electron gas in the vicinity of quantum dots in the limit of strong disorder

   1. Zhukov, A. A.
   2. Weichsel, C.
   3. Beyer, S.
   4. Schnüll, S.
   5. Heyn, Ch.
   6. Hansen, W.

   2003 - Forschungsinformationssystem der UHH
4. Etching temperature dependent mobilities up to 190.000 cm²/Vs at chlorine etched and regrown interfaces

   1. Beyer, S.
   2. Lohr, S.
   3. Heyn, Ch.
   4. Heitmann, D.
   5. Hansen, W.

   2002 - Forschungsinformationssystem der UHH
5. Fabrication of quantum wires by in-situ ion etching and MBE overgrowth

   1. Heyn, Ch.
   2. Klein, C.
   3. Kramp, S.
   4. Beyer, S.
   5. Günther, S.
   6. Heitmann, D.
   7. Hansen, W.

   2001 - Forschungsinformationssystem der UHH
6. Characterization of in situ etched and molecular beam epitaxy regrown GaAs interfaces using capacitance-voltage measurements, far infrared spectroscopy, and magnetotransport measurements

   1. Klein, C.
   2. Kramp, S.
   3. Beyer, S.
   4. Heyn, Ch.
   5. Hansen, W.
   6. Heitmann, D.

   2000 - Forschungsinformationssystem der UHH